Memory cell pillar including source junction plug

Memory cell pillar including source junction plug

Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and co...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Simsek-Ege, Fatma Arzum, Kuo, Meng-Wei, Parat, Krishna K, Tran, Luan C, Hu, Yushi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Some embodiments include apparatuses and methods having a source material, a dielectric material over the source material, a select gate material over the dielectric material, a memory cell stack over the select gate material, a conductive plug located in an opening of the dielectric material and contacting a portion of the source material, and a channel material extending through the memory cell stack and the select gate material and contacting the conductive plug.