III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics

Disclosed herein are IC structures, packages, and devices that include thin-film transistors (TFTs) integrated on the same substrate/die/chip as III-N devices, e.g., III-N transistors. In various aspects, TFTs integrated with III-N transistors have a channel and source/drain materials that include o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Weng, Xiaojun, Beach, Samuel Jack, Then, Han Wui, Ramaswamy, Rahul, Radosavljevic, Marko, Fischer, Paul B, Dasgupta, Sansaptak, Rode, Johann Christian, Hafez, Walid M, Nidhi, Nidhi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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