III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics

III-N transistors integrated with thin-film transistors having graded dopant concentrations and/or composite gate dielectrics

Disclosed herein are IC structures, packages, and devices that include thin-film transistors (TFTs) integrated on the same substrate/die/chip as III-N devices, e.g., III-N transistors. In various aspects, TFTs integrated with III-N transistors have a channel and source/drain materials that include o...

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Bibliographische Detailangaben
Hauptverfasser: Weng, Xiaojun, Beach, Samuel Jack, Then, Han Wui, Ramaswamy, Rahul, Radosavljevic, Marko, Fischer, Paul B, Dasgupta, Sansaptak, Rode, Johann Christian, Hafez, Walid M, Nidhi, Nidhi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed herein are IC structures, packages, and devices that include thin-film transistors (TFTs) integrated on the same substrate/die/chip as III-N devices, e.g., III-N transistors. In various aspects, TFTs integrated with III-N transistors have a channel and source/drain materials that include one or more of a crystalline material, a polycrystalline semiconductor material, or a laminate of crystalline and polycrystalline materials. In various aspects, TFTs integrated with III-N transistors are engineered to include one or more of 1) graded dopant concentrations in their source/drain regions, 2) graded dopant concentrations in their channel regions, and 3) thicker and/or composite gate dielectrics in their gate stacks.