Measurement of properties of patterned photoresist

A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of...

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Bibliographische Detailangaben
Hauptverfasser:	Manassen, Amnon, Uziel, Yoram, Yerushalmi, Liran, Volkovich, Roie
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS TESTING
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Beschreibung
Zusammenfassung:	A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.