Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same

An object of the present invention is to provide a conductive film further improved in at least any of mechanical characteristics, electrical characteristics, and optical characteristics while enjoying improvement in transparency by the thinning of a fine metal wire, and a conductive film roll, an e...

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Bibliographische Detailangaben
Hauptverfasser:	Ikeda, Akira, Hida, Sora, Komatsu, Kazuma, Kamijo, Takeshi, Sugimoto, Tetsuro
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CALCULATING COMPUTING CONDUCTORS COUNTING DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC DIGITAL DATA PROCESSING ELECTRICITY FREQUENCY-CHANGING INSULATORS NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	An object of the present invention is to provide a conductive film further improved in at least any of mechanical characteristics, electrical characteristics, and optical characteristics while enjoying improvement in transparency by the thinning of a fine metal wire, and a conductive film roll, an electronic paper, a touch panel, and a flat-panel display comprising the same. The conductive film of the present invention is a conductive film comprising a transparent substrate and a conductive part comprising a fine metal wire pattern disposed on one side or both sides of the transparent substrate, wherein: the fine metal wire pattern is constituted by a fine metal wire; the fine metal wire comprises conductive metal atom M as well as at least any atom selected from silicon atom Si, oxygen atom O, and carbon atom C; and when the maximum thickness of the fine metal wire is defined as T in STEM-EDX analysis on the cross-section of the fine metal wire perpendicular to the direction of drawing of the fine metal wire, the fine metal wire contains at least any of the silicon atom Si, the oxygen atom O, and the carbon atom C at a predetermined ratio in the thickness direction.