Apparatus and method for measuring phase of extreme ultraviolet (EUV) mask and method of fabricating EUV mask including the method

Apparatus and method for measuring phase of extreme ultraviolet (EUV) mask and method of fabricating EUV mask including the method

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yi, Raewon, Kim, Seongsue, Han, Hakseung, Park, Jongju
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
COLORIMETRY
ELECTROGRAPHY
HOLOGRAPHY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
RADIATION PYROMETRY
TESTING
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Beschreibung
Zusammenfassung:An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.