Method for etching or deposition

A methodology for (a) the etching of films of Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO2, or (c) the selective deposition of tungsten onto metallic substrate...

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Bibliographische Detailangaben
Hauptverfasser:	Baum, Thomas H, Ermert, David M, Wright, Jr., Robert L
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A methodology for (a) the etching of films of Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, SiN, or TiN, or (b) the deposition of tungsten onto the surface of a film chosen from Al2O3, HfO2, ZrO2, W, Mo, Co, Ru, Ir, SiN, TiN, TaN, WN, and SiO2, or (c) the selective deposition of tungsten onto metallic substrates, such as W, Mo, Co, Ru, Ir and Cu, but not metal nitrides or dielectric oxide films, which comprises exposing said films to WOCl4 in the presence of a reducing gas under process conditions.