Nano-wall integrated circuit structure with high integrated density

Nano-wall integrated circuit structure with high integrated density

A nano-wall integrated circuit structure with high integration density is disclosed, which relates to the fields of microelectronic technology and integrated circuits (IC). Based on the different device physical principles with MOSFETs in traditional ICs, the nano-wall integrated circuit unit struct...

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Bibliographische Detailangaben
Hauptverfasser: He, Tao, Liao, Yongbo, Lin, Fan, Xiong, Xuanlin, Feng, Ke, Li, Ping, Peng, Chenxi, Hu, Zhaoxi, Zeng, Xianghe, Li, Yaosen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A nano-wall integrated circuit structure with high integration density is disclosed, which relates to the fields of microelectronic technology and integrated circuits (IC). Based on the different device physical principles with MOSFETs in traditional ICs, the nano-wall integrated circuit unit structure (Nano-Wall FET, referred to as NWaFET) with high integration density can improve the integration of the IC, significantly shorten the channel length, improve the flexibility of the device channel width-to-length ratio adjustment, and save chip area.