Semiconductor optical element, semiconductor optical integrated element, and method for manufacturing semiconductor optical element

A semiconductor optical element includes a first cladding layer; a second cladding layer formed in a ridge shape; and optical confinement layer interposed between the first cladding layer and the second cladding layer to propagate light, wherein the second cladding layer is configured with a ridge b...

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Bibliographische Detailangaben
Hauptverfasser:	Sakuma, Hitoshi, Onoe, Kazuyuki, Yamaguchi, Tsutomu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	A semiconductor optical element includes a first cladding layer; a second cladding layer formed in a ridge shape; and optical confinement layer interposed between the first cladding layer and the second cladding layer to propagate light, wherein the second cladding layer is configured with a ridge bottom layer; a ridge intermediate layer; and a ridge top layer in this order from the optical confinement layer, and the ridge intermediate layer is formed wider in cross section perpendicular to the optical axis-the light propagating direction in optical confinement layer-than the ridge bottom layer and the ridge top layer.