Semiconductor device and electronic apparatus

The present technology relates to a semiconductor device and an electronic apparatus that make it possible to suppress the generation of noise in signals. A semiconductor device includes: a first semiconductor substrate on which at least a portion of a first conductor loop is formed; and a second se...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kojima, Shuuichi, Miyamoto, Takashi, Akiyama, Yoshiyuki, Tsunoda, Junichi
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present technology relates to a semiconductor device and an electronic apparatus that make it possible to suppress the generation of noise in signals. A semiconductor device includes: a first semiconductor substrate on which at least a portion of a first conductor loop is formed; and a second semiconductor substrate on which a second conductor loop is formed. The second semiconductor substrate includes a first conductor layer and a second conductor layer. The first conductor layer and the second conductor layer each include a conductor. The first conductor layer and the second conductor layer are configured to cause a direction of a loop surface in which a magnetic flux is generated from the second conductor loop to be different from a direction of a loop surface in which an induced electromotive force is generated in the first conductor loop. The present technology is applicable, for example, to a CMOS image sensor.