Composition for etching silicon nitride film and etching method using same
An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,
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| creator | Cho, Youn Jin Koh, Sang Ran Hwang, Ki Wook Choi, Jung Min Yoon, Yong Woon Jang, Jun Young Han, Kwen Woo |
| description | An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed, |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11608471B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11608471B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11608471B23</originalsourceid><addsrcrecordid>eNrjZPByzs8tyC_OLMnMz1NIyy9SSC1JzsjMS1cozszJTAaK5WWWFGWmpCqkZebkKiTmpcAV5KaWZOSnKJQWg1Un5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDQzMDCxNzQycjY2LUAAA1_DVE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Composition for etching silicon nitride film and etching method using same</title><source>esp@cenet</source><creator>Cho, Youn Jin ; Koh, Sang Ran ; Hwang, Ki Wook ; Choi, Jung Min ; Yoon, Yong Woon ; Jang, Jun Young ; Han, Kwen Woo</creator><creatorcontrib>Cho, Youn Jin ; Koh, Sang Ran ; Hwang, Ki Wook ; Choi, Jung Min ; Yoon, Yong Woon ; Jang, Jun Young ; Han, Kwen Woo</creatorcontrib><description>An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230321&DB=EPODOC&CC=US&NR=11608471B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230321&DB=EPODOC&CC=US&NR=11608471B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Cho, Youn Jin</creatorcontrib><creatorcontrib>Koh, Sang Ran</creatorcontrib><creatorcontrib>Hwang, Ki Wook</creatorcontrib><creatorcontrib>Choi, Jung Min</creatorcontrib><creatorcontrib>Yoon, Yong Woon</creatorcontrib><creatorcontrib>Jang, Jun Young</creatorcontrib><creatorcontrib>Han, Kwen Woo</creatorcontrib><title>Composition for etching silicon nitride film and etching method using same</title><description>An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPByzs8tyC_OLMnMz1NIyy9SSC1JzsjMS1cozszJTAaK5WWWFGWmpCqkZebkKiTmpcAV5KaWZOSnKJQWg1Un5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JL40GBDQzMDCxNzQycjY2LUAAA1_DVE</recordid><startdate>20230321</startdate><enddate>20230321</enddate><creator>Cho, Youn Jin</creator><creator>Koh, Sang Ran</creator><creator>Hwang, Ki Wook</creator><creator>Choi, Jung Min</creator><creator>Yoon, Yong Woon</creator><creator>Jang, Jun Young</creator><creator>Han, Kwen Woo</creator><scope>EVB</scope></search><sort><creationdate>20230321</creationdate><title>Composition for etching silicon nitride film and etching method using same</title><author>Cho, Youn Jin ; Koh, Sang Ran ; Hwang, Ki Wook ; Choi, Jung Min ; Yoon, Yong Woon ; Jang, Jun Young ; Han, Kwen Woo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11608471B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Cho, Youn Jin</creatorcontrib><creatorcontrib>Koh, Sang Ran</creatorcontrib><creatorcontrib>Hwang, Ki Wook</creatorcontrib><creatorcontrib>Choi, Jung Min</creatorcontrib><creatorcontrib>Yoon, Yong Woon</creatorcontrib><creatorcontrib>Jang, Jun Young</creatorcontrib><creatorcontrib>Han, Kwen Woo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cho, Youn Jin</au><au>Koh, Sang Ran</au><au>Hwang, Ki Wook</au><au>Choi, Jung Min</au><au>Yoon, Yong Woon</au><au>Jang, Jun Young</au><au>Han, Kwen Woo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Composition for etching silicon nitride film and etching method using same</title><date>2023-03-21</date><risdate>2023</risdate><abstract>An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES |
| title | Composition for etching silicon nitride film and etching method using same |
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