Composition for etching silicon nitride film and etching method using same

An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,

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Bibliographische Detailangaben
Hauptverfasser:	Cho, Youn Jin, Koh, Sang Ran, Hwang, Ki Wook, Choi, Jung Min, Yoon, Yong Woon, Jang, Jun Young, Han, Kwen Woo
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed,