Surface treatment method of wafer and composition used for said method

A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming com...

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Bibliographische Detailangaben
1. Verfasser:	Terui, Yoshiharu
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY CLEANING CLEANING IN GENERAL DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A surface treatment method of a Si element-containing wafer including, during a cleaning process of the wafer, forming a water-repellent protective film on at least the recess portion of the uneven pattern by supplying a vapor of a composition containing a water-repellent protective film-forming component and a solvent in a state that a liquid is retained in at least the recess portion of the uneven pattern, changing the vapor of the composition into a liquid and replacing the liquid retained in the recess portion with the liquid of the composition. The water-repellent protective film-forming component consists of a compound of formula [1], and the solvent contains at least an acyclic carbonate.R1x(CH3)3-xSiN(R2)2 [1]R1 is selected from the group consisting of a H and a C1-C10 hydrocarbon group; x is an integer of 1 to 3; and R2 is each independently a group selected from the group consisting of methyl, ethyl and acetyl.