Two terminal spin orbit memory devices and methods of fabrication

A memory device includes a first electrode including a spin-orbit material, a magnetic junction on a portion of the first electrode and a first structure including a dielectric on a portion of the first electrode. The first structure has a first sidewall and a second sidewall opposite to the first s...

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Bibliographische Detailangaben
Hauptverfasser:	Buford, Benjamin, Kabir, Nafees, O'Brien, Kevin, Patil, Rohan, Wiegand, Christopher, Christenson, Michael, Young, Ian, Rahman, Tofizur, Yoo, Hui Jae, Gosavi, Tanay, Manipatruni, Sasikanth, Sato, Noriyuki, Oguz, Kaan, Smith, Angeline
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TRANSFORMERS
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Beschreibung
Zusammenfassung:	A memory device includes a first electrode including a spin-orbit material, a magnetic junction on a portion of the first electrode and a first structure including a dielectric on a portion of the first electrode. The first structure has a first sidewall and a second sidewall opposite to the first sidewall. The memory device further includes a second structure on a portion of the first electrode, where the second structure has a sidewall adjacent to the second sidewall of the first structure. The memory device further includes a first conductive interconnect above and coupled with each of the magnetic junction and the second structure and a second conductive interconnect below and coupled with the first electrode, where the second conductive interconnect is laterally distant from the magnetic junction and the second structure.