Capacitive pressure with Ti electrode

Capacitive pressure with Ti electrode

A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second el...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Faes, Alessandro, Pijnenburg, Remco Henricus Wilhelmus, Besling, Willem Frederik Adrianus, Siegert, Jörg, Vijayakumar, Kailash
Format: Patent
Sprache:eng
Schlagworte:
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
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Beschreibung
Zusammenfassung:A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.