Semiconductor memory device

A semiconductor memory device comprises a semiconductor, a first insulator, a second insulator, a first conductor, a third insulator, a fourth insulator, and a fifth insulator. The first insulator is on the semiconductor. The second insulator is on the first insulator. The third insulator is on the...

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Bibliographische Detailangaben
Hauptverfasser: Uchiyama, Yasuhiro, Itokawa, Hiroshi, Sawabe, Ryosuke
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor memory device comprises a semiconductor, a first insulator, a second insulator, a first conductor, a third insulator, a fourth insulator, and a fifth insulator. The first insulator is on the semiconductor. The second insulator is on the first insulator. The third insulator is on the first conductor. The fourth insulator is between the second insulator and the first conductor. The fifth insulator is provided between the second insulator and the third insulator. The fifth insulator is having an oxygen concentration different from an oxygen concentration of the fourth insulator.