Transistor arrangement with a load transistor and a sense transistor
A method of current detection includes providing a transistor arrangement which comprises a drift and drain region arranged in a semiconductor body and each connected to a drain node, a plurality of load transistor cells each having a source region integrated in a first region of the semiconductor b...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method of current detection includes providing a transistor arrangement which comprises a drift and drain region arranged in a semiconductor body and each connected to a drain node, a plurality of load transistor cells each having a source region integrated in a first region of the semiconductor body, a plurality of sense transistor cells each having a source region integrated in a second region of the semiconductor body, a first source node electrically connected to the source region of each of the plurality of the load transistor cells via a first source conductor, and a second source node electrically connected to the source region of each of the plurality of the sense transistor cells via a second source conductor; and detecting a first current flowing between the drain node and the first source node of the transistor arrangement, wherein detecting the first current includes measuring a second current flowing between the drain node and the second source node of the transistor arrangement. |
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