Memory circuit and method of operating same

A memory circuit includes a non-volatile memory cell, a sense amplifier coupled to the non-volatile memory cell, and configured to generate a first output signal, and a detection circuit coupled to the sense amplifier and the non-volatile memory cell. The detection circuit is configured to latch the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Li, Gu-Huan, Chou, Shao-Yu, Chang, Chun-Hao
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A memory circuit includes a non-volatile memory cell, a sense amplifier coupled to the non-volatile memory cell, and configured to generate a first output signal, and a detection circuit coupled to the sense amplifier and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and disrupt a current path between the non-volatile memory cell and the sense amplifier.