Light-emitting device

A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Chen, Chao-Hsing, Lin, Yi-Hung, Wang, Jia-Kuen, Tseng, Tzu-Yao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEATING INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21Sand F21V, RELATING TO THEFORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THELIGHT EMITTED LIGHT SOURCES NOT OTHERWISE PROVIDED FOR LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATINGELEMENTS LIGHTING MECHANICAL ENGINEERING NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE SEMICONDUCTOR DEVICES WEAPONS
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Beschreibung
Zusammenfassung:	A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.