Correlation between emission spots utilizing CAD data in combination with emission microscope images

A method includes capturing a photon emission microscope (PEM) image of an integrated circuit (IC), and identifying emission sites in the PEM image, where the emission sites are associated with a leakage current. A set of common nets is found that connects multiple emission sites using layout data a...

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Bibliographische Detailangaben
Hauptverfasser: Oberai, Ankush Bharati, Kamoji, Rupa Sunil
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method includes capturing a photon emission microscope (PEM) image of an integrated circuit (IC), and identifying emission sites in the PEM image, where the emission sites are associated with a leakage current. A set of common nets is found that connects multiple emission sites using layout data and/or netlist data in computer-aided design (CAD) data. From the layout data and/or netlist data, a critical net is identified from the set of common nets connecting a threshold number of emission sites. The critical net is cross-mapped, by a processor, tip netlist data in the CAD data. A particular device is identified from the netlist data that has an output pin connected to the critical net. The particular device identified from the netlist data is cross-mapped, by a processor, to the layout data, wherein the critical net connects at least two devices at the identified emission sites including the particular device.