Organic light emitting diode having n-type host with narrow band gap and organic light emitting display device including the same

The present disclosure provides an organic light emitting diode comprising a first electrode; a second electrode facing the first electrode; and an emitting material layer. The emitting material layer includes a p-type host, a n-type host and a phosphorescent dopant and positioned between the first...

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Bibliographische Detailangaben
Hauptverfasser: Hong, Tae-Ryang, Choi, Hyong-Jong, Lee, Ah-Rang, Kim, Jun-Yun, Kim, Jin Hee
Format: Patent
Sprache:eng
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Zusammenfassung:The present disclosure provides an organic light emitting diode comprising a first electrode; a second electrode facing the first electrode; and an emitting material layer. The emitting material layer includes a p-type host, a n-type host and a phosphorescent dopant and positioned between the first electrode and the second electrode, wherein a first energy level of a HOMO of the p-type host is equal to or lower than a second energy level of a HOMO of the n-type host, and a difference between an energy level of a singlet state of the n-type host and an energy level of a triplet state of the n-type host is greater than 0.3 eV and smaller than 0.5 eV.