Integrated circuit structure with dielectric material to cover horizontally separated metal layers, and related method

Integrated circuit structure with dielectric material to cover horizontally separated metal layers, and related method

Embodiments of the disclosure provide an integrated circuit (IC) structure. The IC structure may include a first metal layer on a substrate, and a second metal layer on the substrate that is horizontally separated from the first metal layer. A dielectric material may include a first portion on the f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Rohlfs, Patrick, Küchenmeister, Frank G, Bedürftig, Sven, Lehmann, Lothar E, Kunze, Hartmuth Daniel, Wieland, Marcel B
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INDUCTANCES
MAGNETS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
SEMICONDUCTOR DEVICES
TRANSFORMERS
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Beschreibung
Zusammenfassung:Embodiments of the disclosure provide an integrated circuit (IC) structure. The IC structure may include a first metal layer on a substrate, and a second metal layer on the substrate that is horizontally separated from the first metal layer. A dielectric material may include a first portion on the first metal layer, and having a first upper surface, a second portion on the second metal layer, and having a second upper surface, and a third portion on the substrate between the first metal layer and the second metal layer. The third portion of the dielectric material includes a third upper surface above the first upper surface of the first portion and the second upper surface of the second portion of the dielectric material.