Inverted integrated circuit and method of forming the same

An integrated circuit includes a first active region, a second active region, a first insulating region, a first contact and a second contact. The first and second active region extend in a first direction, are in a substrate, and are located on a first level. The second active region is separated f...

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Bibliographische Detailangaben
Hauptverfasser:	Chang, Yu-Jung, Chiang, Ting-Wei, Zhuang, Hui-Zhong, Wang, Pochun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An integrated circuit includes a first active region, a second active region, a first insulating region, a first contact and a second contact. The first and second active region extend in a first direction, are in a substrate, and are located on a first level. The second active region is separated from the first active region in a second direction. The first insulating region is over the first active region. The first contact extends in the second direction, overlaps the second active region, and is located on a second level different from the first level. The second contact extends in the first direction and the second direction, overlaps the first insulating region and the first contact. The second contact is electrically insulated from the first active region, and is located on a third level different from the first level and the second level.