Minimization of insertion loss variation in through-silicon vias (TSVs)

Minimization of insertion loss variation in through-silicon vias (TSVs)

An electronic device package is described. The electronic device package includes one or more dies. The electronic device package includes an interposer coupled to the one or more dies. The electronic device package also includes a package substrate coupled to the interposer. The electronic device p...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Qian, Zhiguo, Mekonnen, Yidnekachew S, Xie, Jianyong, Aygun, Kemal
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An electronic device package is described. The electronic device package includes one or more dies. The electronic device package includes an interposer coupled to the one or more dies. The electronic device package also includes a package substrate coupled to the interposer. The electronic device package includes a plurality of through-silicon vias (TSVs) in at least one die of the one or more dies, or the interposer, or both. The electronic device package includes a passive equalizer structure communicatively coupled to a TSV pair in the plurality of TSVs. The passive equalizer structure is operable to minimize a level of insertion loss variation in the TSV pair.