Plasma etching method and semiconductor device fabrication method including the same
A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the...
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| creator | Choi, Myungsun Shim, Seungbo Han, Byunghun Na, Donghyeon Lee, Minjae Kim, Yonghee Kang, Hyeongmo Hur, Minyoung Sung, Dougyong |
| description | A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11545341B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11545341B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11545341B23</originalsourceid><addsrcrecordid>eNqNyzEOwjAMQNEsDAi4gzkAQ2h7ARCIEYkyV8ZxiaXGqRqX8yMk2Jn-8v7StdcBS0Jgoyj6hMQWcwDUAIWTUNYwk-UJAr-EGHp8TEJokvVnRWmYw2e2yFAw8dotehwKb75due351B4vOx5zx2VEYmXr7jfvm7qpan_YV_-YN7tLOSk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma etching method and semiconductor device fabrication method including the same</title><source>esp@cenet</source><creator>Choi, Myungsun ; Shim, Seungbo ; Han, Byunghun ; Na, Donghyeon ; Lee, Minjae ; Kim, Yonghee ; Kang, Hyeongmo ; Hur, Minyoung ; Sung, Dougyong</creator><creatorcontrib>Choi, Myungsun ; Shim, Seungbo ; Han, Byunghun ; Na, Donghyeon ; Lee, Minjae ; Kim, Yonghee ; Kang, Hyeongmo ; Hur, Minyoung ; Sung, Dougyong</creatorcontrib><description>A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230103&DB=EPODOC&CC=US&NR=11545341B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230103&DB=EPODOC&CC=US&NR=11545341B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Choi, Myungsun</creatorcontrib><creatorcontrib>Shim, Seungbo</creatorcontrib><creatorcontrib>Han, Byunghun</creatorcontrib><creatorcontrib>Na, Donghyeon</creatorcontrib><creatorcontrib>Lee, Minjae</creatorcontrib><creatorcontrib>Kim, Yonghee</creatorcontrib><creatorcontrib>Kang, Hyeongmo</creatorcontrib><creatorcontrib>Hur, Minyoung</creatorcontrib><creatorcontrib>Sung, Dougyong</creatorcontrib><title>Plasma etching method and semiconductor device fabrication method including the same</title><description>A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyzEOwjAMQNEsDAi4gzkAQ2h7ARCIEYkyV8ZxiaXGqRqX8yMk2Jn-8v7StdcBS0Jgoyj6hMQWcwDUAIWTUNYwk-UJAr-EGHp8TEJokvVnRWmYw2e2yFAw8dotehwKb75due351B4vOx5zx2VEYmXr7jfvm7qpan_YV_-YN7tLOSk</recordid><startdate>20230103</startdate><enddate>20230103</enddate><creator>Choi, Myungsun</creator><creator>Shim, Seungbo</creator><creator>Han, Byunghun</creator><creator>Na, Donghyeon</creator><creator>Lee, Minjae</creator><creator>Kim, Yonghee</creator><creator>Kang, Hyeongmo</creator><creator>Hur, Minyoung</creator><creator>Sung, Dougyong</creator><scope>EVB</scope></search><sort><creationdate>20230103</creationdate><title>Plasma etching method and semiconductor device fabrication method including the same</title><author>Choi, Myungsun ; Shim, Seungbo ; Han, Byunghun ; Na, Donghyeon ; Lee, Minjae ; Kim, Yonghee ; Kang, Hyeongmo ; Hur, Minyoung ; Sung, Dougyong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11545341B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Choi, Myungsun</creatorcontrib><creatorcontrib>Shim, Seungbo</creatorcontrib><creatorcontrib>Han, Byunghun</creatorcontrib><creatorcontrib>Na, Donghyeon</creatorcontrib><creatorcontrib>Lee, Minjae</creatorcontrib><creatorcontrib>Kim, Yonghee</creatorcontrib><creatorcontrib>Kang, Hyeongmo</creatorcontrib><creatorcontrib>Hur, Minyoung</creatorcontrib><creatorcontrib>Sung, Dougyong</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Choi, Myungsun</au><au>Shim, Seungbo</au><au>Han, Byunghun</au><au>Na, Donghyeon</au><au>Lee, Minjae</au><au>Kim, Yonghee</au><au>Kang, Hyeongmo</au><au>Hur, Minyoung</au><au>Sung, Dougyong</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma etching method and semiconductor device fabrication method including the same</title><date>2023-01-03</date><risdate>2023</risdate><abstract>A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES |
| title | Plasma etching method and semiconductor device fabrication method including the same |
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