Plasma etching method and semiconductor device fabrication method including the same

A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the...

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Bibliographische Detailangaben
Hauptverfasser:	Choi, Myungsun, Shim, Seungbo, Han, Byunghun, Na, Donghyeon, Lee, Minjae, Kim, Yonghee, Kang, Hyeongmo, Hur, Minyoung, Sung, Dougyong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.