Tri-gate charge transfer block structure in time of flight pixel

A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate...

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Bibliographische Detailangaben
Hauptverfasser:	Choi, Woon II, Manabe, Sohei
Format:	Patent
Sprache:	eng
Schlagworte:	ANALOGOUS ARRANGEMENTS USING OTHER WAVES BASIC ELECTRIC ELEMENTS DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES MEASURING PHYSICS RADIO DIRECTION-FINDING RADIO NAVIGATION SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.