III-V light emitting device having low Si-H bonding dielectric layers for improved P-side contact performance

III-V light emitting device having low Si-H bonding dielectric layers for improved P-side contact performance

A multilayer light emitting device having a plurality of low Si-H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of...

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Bibliographische Detailangaben
Hauptverfasser: Crouch, Clarence, Yadavalli, Kameshwar, El-Ghoroury, Hussein S, Park, JeongHyuk, Fan, Qian, Teren, Andrew, Batinica, Gregory
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A multilayer light emitting device having a plurality of low Si-H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.