Resetting method of resistive random access memory

Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying resul...

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Bibliographische Detailangaben
Hauptverfasser:	Wang, Ping-Kun, Chen, Yu-Ting, Pai, Chang-Tsung, Lin, Ming-Che, Liu, Chi-Ching, Liao, Shao-Ching
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Provided is a resetting method of a resistive random access memory (RRAM) including the following steps. A first resetting operation and a first verifying operation on the at least one resistive memory cell are performed. Whether to perform a second resetting operation according to a verifying result of the first verifying operation is determined. A second verifying operation is performed after the second resetting operation is determined to be performed and is finished. To determine whether to perform a healing resetting operation according to a verifying result of the second verifying operation, which comprises: performing the healing resetting operation when a verifying current of the second verifying operation is greater than a predetermined current, wherein a resetting voltage of the healing resetting operation is greater than a resetting voltage of the second resetting operation.