Laterally diffused metal oxide semiconductor device with isolation structures for recovery charge removal

A system and method for a Laterally Diffused Metal Oxide Semiconductor (LDMOS) with Shallow Trench Isolation (STI) in the backgate region of FET with trench contacts is provided. The backgate diffusion region of the FET is split in the middle of the source-backgate side of the LDMOS with a strip of STI. A contact can be drawn across STI strip. The contact etch can be etched through the STI fill. The contact barrier material and trench fill processes can create a metal-semiconductor contact in the outline of the STI.