Image sensor grid and method of fabrication of same
An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure inclu...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid. |
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