Substrate processing method and substrate processing device

In a second liquid supply step, a second liquid film and a first liquid film surrounding a side of the second liquid film are formed on an upper surface of a substrate. Then, in a vapor layer formation step, by heating the substrate, a second vapor layer is formed by evaporating the second liquid contacting the upper surface of the substrate, and the second liquid film is held on the second vapor layer. Since the second liquid included in the second liquid film has a high vapor pressure, a height position of a lower surface of the floating second liquid film may be kept high. By blowing a gas to the floating second liquid film, a hole is formed in the second liquid film, and by expanding the hole toward an outer periphery of the substrate, the first liquid and the second liquid are removed outside the substrate.