Resistive random access memory devices

Resistive random access memory devices

The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including an opening in a dielectric structure, the opening...

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Hauptverfasser: Hsieh, Curtis Chun-I, Yi, Wanbing, Jiang, Yi, Kang, Kai, Tan, Juan Boon, Hsu, Wei-Hui
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Hsieh, Curtis Chun-I
Yi, Wanbing
Jiang, Yi
Kang, Kai
Tan, Juan Boon
Hsu, Wei-Hui
description The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including an opening in a dielectric structure, the opening having a sidewall, a first electrode on the sidewall of the opening, a spacer layer on the first electrode, a resistive layer on the first electrode and upon an upper surface of the spacer layer, and a second electrode on the resistive layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Resistive random access memory devices
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