Heterogeneously integrated semiconductor device and manufacturing method thereof

Heterogeneously integrated semiconductor device and manufacturing method thereof

A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semicon...

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Bibliographische Detailangaben
Hauptverfasser: Luo, Guang-Li, Hsu, Ta-Cheng, Chyi, Jen-Inn, Chang, Shih-Pang, Lee, Shih-Chang, Chen, Szu-Hung, Chen, Meng-Yang, Yeh, Wen-Kuan, Lee, Rong-Ren
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.