Substrate processing method using multiline patterning

A method includes providing a substrate including mandrels of a first material positioned on an underlying layer. Each of the mandrels includes a first sidewall and an opposing second sidewall. The method further includes forming sidewall spacers made of a second material and including a first sidew...

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Bibliographische Detailangaben
1. Verfasser:	Ko, Akiteru
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method includes providing a substrate including mandrels of a first material positioned on an underlying layer. Each of the mandrels includes a first sidewall and an opposing second sidewall. The method further includes forming sidewall spacers made of a second material and including a first sidewall spacer abutting each respective first sidewall and a second sidewall spacer abutting each respective second sidewall. The mandrels extend above top surfaces of the sidewall spacers. The method also includes forming first capped sidewall spacers by depositing a third material on the first sidewall spacers without depositing on the second sidewall spacers, forming second capped sidewall spacers by depositing a fourth material on the second sidewall spacers without depositing on the first sidewall spacers, and selectively removing at least one of the first material, the second material, the third material, and the fourth material to uncover an exposed portion of the underlying layer.