Doped semiconductor-based radiation detectors

Doped semiconductor-based radiation detectors

A radiation detector is generally described. The detector can comprise a thallium halide (e.g., TlBr) and/or an indium halide. The thallium halide and/or indium halide can be doped with a dopant or a mixture of dopants. The dopant can comprise an alkaline earth metal element, a lanthanide element, a...

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Bibliographische Detailangaben
Hauptverfasser: Shah, Kanai S, Cirignano, Leonard, Kim, Hadong, Churilov, Alexei, Gueorguiev, Andrey, Kargar, Alireza
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Beschreibung
Zusammenfassung:A radiation detector is generally described. The detector can comprise a thallium halide (e.g., TlBr) and/or an indium halide. The thallium halide and/or indium halide can be doped with a dopant or a mixture of dopants. The dopant can comprise an alkaline earth metal element, a lanthanide element, and/or an element with an oxidation state of +2. Non-limiting examples of suitable dopants include Ba, Sr, Ca, Mg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and/or Yb. Radiation detectors, as described herein, may have beneficial properties, including enhanced charge collection and long-term stability.