Semiconductor inspection device and probe unit

Provided is a semiconductor inspection device capable of high-speed response analysis as defect analysis of a fine-structured device constituting an LSI. Therefore, the semiconductor inspection device includes a vacuum chamber 3, a sample table 4 which is disposed in the vacuum chamber and on which a sample 6 is placed, an electron optical system 1 disposed such that an electron beam is emitted from above the sample, a plurality of probe units 24 connected to external devices 11 and 12 disposed outside the vacuum chamber via a coaxial cable 10, and an electrode 5 provided on or in the vicinity of the sample table. The probe unit 24 includes a measurement probe 8 configured to come into contact with the sample, a GND terminal 9 configured to come into contact with the electrode 5, and a probe holder 7 configured to hold the measurement probe and the GND terminal, connect a signal line of the coaxial cable to the measurement probe, and connect a GND line of the coaxial cable to the GND terminal. When the measurement probe of the probe unit comes into contact with the sample, the GND terminal comes into contact with the electrode.