Semiconductor structure and method for manufacturing the same

Semiconductor structure and method for manufacturing the same

A method of manufacturing a semiconductor structure includes the following operations. A wafer includes a crystal orientation represented by a family of Miller indices comprising , wherein l2+m2+n2=1. A first chip and a second chip are over the wafer. A first edge of the first chip and a second edge...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lu, Victor Y, Lin, Shi-Chieh, Chen, Pu-Fang
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor structure includes the following operations. A wafer includes a crystal orientation represented by a family of Miller indices comprising , wherein l2+m2+n2=1. A first chip and a second chip are over the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. A first included angle between the first direction and the crystal orientation is greater than or equal to 0 degree and less than 45 degrees.