Memory devices and methods of forming memory devices

Memory devices and methods of forming memory devices

A memory device may be provided, including a base insulating layer, a bottom electrode arranged within the base insulating layer, a substantially planar switching layer arranged over the base insulating layer and a substantially planar top electrode arranged over the switching layer in a laterally o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Toh, Eng Huat, Tan, Shyue Seng, Loy, Desmond Jia Jun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A memory device may be provided, including a base insulating layer, a bottom electrode arranged within the base insulating layer, a substantially planar switching layer arranged over the base insulating layer and a substantially planar top electrode arranged over the switching layer in a laterally offset position relative to the bottom electrode.