Semiconductor substrate supports with improved high temperature chucking
Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also in...
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creator | Srivastava, Shailendra Hu, Kesong Han, Xinhai Li, Jian Wang, Chuan Ying Ye, Zheng John Rocha-Alvarez, Juan Carlos Benjamin Raj, Daemian Raj Padhi, Deenesh |
description | Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11501993B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11501993B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11501993B23</originalsourceid><addsrcrecordid>eNrjZPAITs3NTM7PSylNLskvUiguTSouKUosSQWyCgryi0qKFcozSzIUMnMLivLLUlMUMjLTMxRKUnMLUoGqSotSFZIzSpOzM_PSeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfGiwoaGpgaGlpbGTkTExagBTijXF</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor substrate supports with improved high temperature chucking</title><source>esp@cenet</source><creator>Srivastava, Shailendra ; Hu, Kesong ; Han, Xinhai ; Li, Jian ; Wang, Chuan Ying ; Ye, Zheng John ; Rocha-Alvarez, Juan Carlos ; Benjamin Raj, Daemian Raj ; Padhi, Deenesh</creator><creatorcontrib>Srivastava, Shailendra ; Hu, Kesong ; Han, Xinhai ; Li, Jian ; Wang, Chuan Ying ; Ye, Zheng John ; Rocha-Alvarez, Juan Carlos ; Benjamin Raj, Daemian Raj ; Padhi, Deenesh</creatorcontrib><description>Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221115&DB=EPODOC&CC=US&NR=11501993B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221115&DB=EPODOC&CC=US&NR=11501993B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Srivastava, Shailendra</creatorcontrib><creatorcontrib>Hu, Kesong</creatorcontrib><creatorcontrib>Han, Xinhai</creatorcontrib><creatorcontrib>Li, Jian</creatorcontrib><creatorcontrib>Wang, Chuan Ying</creatorcontrib><creatorcontrib>Ye, Zheng John</creatorcontrib><creatorcontrib>Rocha-Alvarez, Juan Carlos</creatorcontrib><creatorcontrib>Benjamin Raj, Daemian Raj</creatorcontrib><creatorcontrib>Padhi, Deenesh</creatorcontrib><title>Semiconductor substrate supports with improved high temperature chucking</title><description>Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAITs3NTM7PSylNLskvUiguTSouKUosSQWyCgryi0qKFcozSzIUMnMLivLLUlMUMjLTMxRKUnMLUoGqSotSFZIzSpOzM_PSeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfGiwoaGpgaGlpbGTkTExagBTijXF</recordid><startdate>20221115</startdate><enddate>20221115</enddate><creator>Srivastava, Shailendra</creator><creator>Hu, Kesong</creator><creator>Han, Xinhai</creator><creator>Li, Jian</creator><creator>Wang, Chuan Ying</creator><creator>Ye, Zheng John</creator><creator>Rocha-Alvarez, Juan Carlos</creator><creator>Benjamin Raj, Daemian Raj</creator><creator>Padhi, Deenesh</creator><scope>EVB</scope></search><sort><creationdate>20221115</creationdate><title>Semiconductor substrate supports with improved high temperature chucking</title><author>Srivastava, Shailendra ; Hu, Kesong ; Han, Xinhai ; Li, Jian ; Wang, Chuan Ying ; Ye, Zheng John ; Rocha-Alvarez, Juan Carlos ; Benjamin Raj, Daemian Raj ; Padhi, Deenesh</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11501993B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Srivastava, Shailendra</creatorcontrib><creatorcontrib>Hu, Kesong</creatorcontrib><creatorcontrib>Han, Xinhai</creatorcontrib><creatorcontrib>Li, Jian</creatorcontrib><creatorcontrib>Wang, Chuan Ying</creatorcontrib><creatorcontrib>Ye, Zheng John</creatorcontrib><creatorcontrib>Rocha-Alvarez, Juan Carlos</creatorcontrib><creatorcontrib>Benjamin Raj, Daemian Raj</creatorcontrib><creatorcontrib>Padhi, Deenesh</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Srivastava, Shailendra</au><au>Hu, Kesong</au><au>Han, Xinhai</au><au>Li, Jian</au><au>Wang, Chuan Ying</au><au>Ye, Zheng John</au><au>Rocha-Alvarez, Juan Carlos</au><au>Benjamin Raj, Daemian Raj</au><au>Padhi, Deenesh</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor substrate supports with improved high temperature chucking</title><date>2022-11-15</date><risdate>2022</risdate><abstract>Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
title | Semiconductor substrate supports with improved high temperature chucking |
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