Semiconductor substrate supports with improved high temperature chucking

Semiconductor substrate supports with improved high temperature chucking

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also in...

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Bibliographische Detailangaben
Hauptverfasser: Srivastava, Shailendra, Hu, Kesong, Han, Xinhai, Li, Jian, Wang, Chuan Ying, Ye, Zheng John, Rocha-Alvarez, Juan Carlos, Benjamin Raj, Daemian Raj, Padhi, Deenesh
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GENERATION
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500° C. and a voltage of greater than or about 600 V.