Method for providing a semiconductor device with silicon filled gaps
Method for filling a gap, comprisingproviding in a deposition chamber a semiconductor substrate having a gap, wherein a bottom of the gap includes a crystalline semiconducting material and wherein a side wall of the gap includes an amorphous material;depositing a silicon precursor in the gap.
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| creator | Houben, Kelly Jongbloed, Bert Pierreux, Dieter Trovato, Anna van Aerde, Steven Verweij, Wilco A |
| description | Method for filling a gap, comprisingproviding in a deposition chamber a semiconductor substrate having a gap, wherein a bottom of the gap includes a crystalline semiconducting material and wherein a side wall of the gap includes an amorphous material;depositing a silicon precursor in the gap. |
| format | Patent |
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| title | Method for providing a semiconductor device with silicon filled gaps |
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