Method for providing a semiconductor device with silicon filled gaps

Method for filling a gap, comprisingproviding in a deposition chamber a semiconductor substrate having a gap, wherein a bottom of the gap includes a crystalline semiconducting material and wherein a side wall of the gap includes an amorphous material;depositing a silicon precursor in the gap.

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Bibliographische Detailangaben
Hauptverfasser:	Houben, Kelly, Jongbloed, Bert, Pierreux, Dieter, Trovato, Anna, van Aerde, Steven, Verweij, Wilco A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	Method for filling a gap, comprisingproviding in a deposition chamber a semiconductor substrate having a gap, wherein a bottom of the gap includes a crystalline semiconducting material and wherein a side wall of the gap includes an amorphous material;depositing a silicon precursor in the gap.