Hall effect sensors

The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to...

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Hauptverfasser:	Toh, Eng Huat, Zheng, Ping, Sun, Yongshun
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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creator	Toh, Eng Huat Zheng, Ping Sun, Yongshun
description	The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US11500041B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US11500041B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US11500041B23</originalsourceid><addsrcrecordid>eNrjZBD2SMzJUUhNS0tNLlEoTs0rzi8q5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhoamBgYGJoZORsbEqAEAExMgQQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Hall effect sensors</title><source>esp@cenet</source><creator>Toh, Eng Huat ; Zheng, Ping ; Sun, Yongshun</creator><creatorcontrib>Toh, Eng Huat ; Zheng, Ping ; Sun, Yongshun</creatorcontrib><description>The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks.</description><language>eng</language><subject>ELECTRICITY ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221115&DB=EPODOC&CC=US&NR=11500041B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20221115&DB=EPODOC&CC=US&NR=11500041B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Toh, Eng Huat</creatorcontrib><creatorcontrib>Zheng, Ping</creatorcontrib><creatorcontrib>Sun, Yongshun</creatorcontrib><title>Hall effect sensors</title><description>The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks.</description><subject>ELECTRICITY</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBD2SMzJUUhNS0tNLlEoTs0rzi8q5mFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhoamBgYGJoZORsbEqAEAExMgQQ</recordid><startdate>20221115</startdate><enddate>20221115</enddate><creator>Toh, Eng Huat</creator><creator>Zheng, Ping</creator><creator>Sun, Yongshun</creator><scope>EVB</scope></search><sort><creationdate>20221115</creationdate><title>Hall effect sensors</title><author>Toh, Eng Huat ; Zheng, Ping ; Sun, Yongshun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US11500041B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>ELECTRICITY</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Toh, Eng Huat</creatorcontrib><creatorcontrib>Zheng, Ping</creatorcontrib><creatorcontrib>Sun, Yongshun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Toh, Eng Huat</au><au>Zheng, Ping</au><au>Sun, Yongshun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Hall effect sensors</title><date>2022-11-15</date><risdate>2022</risdate><abstract>The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks.</abstract><oa>free_for_read</oa></addata></record>
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recordid	cdi_epo_espacenet_US11500041B2
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subjects	ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
title	Hall effect sensors
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T11%3A50%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Toh,%20Eng%20Huat&rft.date=2022-11-15&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS11500041B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true