Hall effect sensors
The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure relates to semiconductor structures and, more particularly, to 3-contact hall sensors and methods of manufacture and modes of operation. The structure includes: a plurality of sensing blocks each of which include a plurality of contacts; a first switching element connecting to a first set of sensing blocks of the plurality of sensing blocks; and a second switching element connecting to a second set of sensing blocks of the plurality of sensing blocks. |
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