Semiconductor device

The plurality of first control electrodes extend in a first direction in a planar view, the plurality of second control electrodes extend in a second direction in a planar view. A sum of lengths in the first direction of boundaries between the second semiconductor layer and the plurality of third se...

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Bibliographische Detailangaben
1. Verfasser:	Satoh, Katsumi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORSOR DYNAMO-ELECTRIC CONVERTERS CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The plurality of first control electrodes extend in a first direction in a planar view, the plurality of second control electrodes extend in a second direction in a planar view. A sum of lengths in the first direction of boundaries between the second semiconductor layer and the plurality of third semiconductor layers on a surface of the semiconductor substrate which faces the plurality of first control electrodes is set as a first gate total width. A sum of lengths in the second direction of boundaries between the fourth semiconductor layer and the plurality of fifth semiconductor layers on a surface of the semiconductor substrate which faces the plurality of second control electrodes is set as a second gate total width. A gate width ratio obtained by dividing the second gate total width by the first gate total width is equal to or higher than 1.0.