Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device
Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each o...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern. |
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