Determination of optical roughness in EUV structures

A computer-implemented method for determining optical roughness in a semiconductor pattern structure that includes receiving, using a processor, optical responses spectra collected from the semiconductor pattern structure and constructing, using the processor optical critical dimension (OCD) models...

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Bibliographische Detailangaben
Hauptverfasser:	Muthinti, Gangadhara Raja, Bonam, Ravi K
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A computer-implemented method for determining optical roughness in a semiconductor pattern structure that includes receiving, using a processor, optical responses spectra collected from the semiconductor pattern structure and constructing, using the processor optical critical dimension (OCD) models by using a set of input parameters for each layer of the semiconductor pattern structure. The method further includes calculating, using the processor, theoretical optical responses from a theoretical input generated by the OCD models. In addition, the method provides for comparing, using the processor, the optical responses spectra of the semiconductor pattern structure to the theoretical optical responses to determine output parameters for the optical roughness of the semiconductor pattern structure.