Heat shielding member, single crystal pulling apparatus, and method of producing single crystal silicon ingot

Provided is a heat shielding member, a single crystal pulling apparatus, and a method of producing a single crystal silicon ingot, which can expand the margin of the crystal pulling rate with which a defect-free single crystal silicon can be obtained. A heat shielding member is provided in a single...

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Bibliographische Detailangaben
Hauptverfasser:	Kuragaki, Shunji, Tanabe, Kazumi, Kajiwara, Kaoru, Suewaka, Ryota
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Provided is a heat shielding member, a single crystal pulling apparatus, and a method of producing a single crystal silicon ingot, which can expand the margin of the crystal pulling rate with which a defect-free single crystal silicon can be obtained. A heat shielding member is provided in a single crystal pulling apparatus, the heat shielding member including a cylindrical tubular portion surrounding an outer circumferential surface of the single crystal silicon ingot; and a ring-shaped projecting portion under the tubular portion. The projecting portion has an upper wall, a bottom wall, and two vertical walls, a heat insulating material with a ring shape is provided in the space surrounded by those walls; and a gap between the vertical wall adjacent to the single crystal silicon ingot and the heat insulating material.