Light emitting device

The present disclosure relates to a solid-state light emitting device, a solid state light absorbing device and methods for fabricating the same. In particular, the present disclosure relates to a light emitting device comprising: a transition metal dichalcolgenide layer disposed between two layers of a material with a bandgap larger than the transition metal dichalcolgenide layer; a plurality of nanoparticles embedded into the transition metal dichalcolgenide layer and being arranged to form a plurality of allowable energy levels within the bandgap of the transition metal dichalcolgenide layer; and electrodes arranged to apply a voltage across the two layers and the transition metal dichalcolgenide layer; wherein, when a voltage within a predetermined range is applied to the electrodes, photons with a wavelength within a specific wavelength range are emitted by the device and the wavelength range can be varied by varying the voltage across the two layers and the transition metal dichalcolgenide layer.